A highly reactive chalcogenide precursor for the synthesis of metal chalcogenide quantum dotsElectronic supplementary information (ESI) available: Experimental details and additional figures as described in the text. See DOI: 10.1039/c5nr05747g
Metal chalcogenide semiconductor nanocrystals (NCs) are ideal inorganic materials for solar cells and biomedical labeling. In consideration of the hazard and instability of alkylphosphines, the phosphine-free synthetic route has become one of the most important trends in synthesizing selenide QDs. H...
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Main Authors | , , , , , |
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Format | Journal Article |
Language | English |
Published |
13.11.2015
|
Online Access | Get full text |
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Summary: | Metal chalcogenide semiconductor nanocrystals (NCs) are ideal inorganic materials for solar cells and biomedical labeling. In consideration of the hazard and instability of alkylphosphines, the phosphine-free synthetic route has become one of the most important trends in synthesizing selenide QDs. Here we report a novel phase transfer strategy to prepare phosphine-free chalcogenide precursors. The anions in aqueous solution were transferred to toluene
via
electrostatic interactions between the anions and didodecyldimethylammonium bromide (DDAB). The obtained chalcogenide precursors show high reactivity with metal ions in the organic phase and could be applied to the low-temperature synthesis of various metal chalcogenide NCs based on a simple reaction between metal ions (
e.g.
Ag
+
, Pb
2+
, Cd
2+
) and chalcogenide anions (
e.g.
S
2−
) in toluene. In addition to chalcogenide anions, other anions such as BH
4
−
ions and AuCl
4
−
ions can also be transferred to the organic phase for synthesizing noble metal NCs (such as Ag and Au NCs).
A phase transfer strategy was developed to prepare phosphine-free chalcogenide precursors, enabling metal chalcogenide nanocrystals to be synthesized at low-temperature. |
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Bibliography: | Electronic supplementary information (ESI) available: Experimental details and additional figures as described in the text. See DOI 10.1039/c5nr05747g |
ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c5nr05747g |