Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranesElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr04821d

We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As 4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are obtained for pitches around 0.7-1 μm and a ga...

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Bibliographic Details
Main Authors Tutuncuoglu, G, de la Mata, M, Deiana, D, Potts, H, Matteini, F, Arbiol, J, Fontcuberta i Morral, A
Format Journal Article
LanguageEnglish
Published 19.11.2015
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Summary:We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As 4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are obtained for pitches around 0.7-1 μm and a gallium rate of 1 Å s −1 . The functionality of the membranes is further illustrated by the growth of quantum heterostructures (such as quantum wells) and the characterization of their optical properties at the nanoscale. This proves the potential of nanoscale membranes for optoelectronic applications. HAADF-STEM view of the GaAs membrane with a quantum well, along with a false color zoom.
Bibliography:10.1039/c5nr04821d
Electronic supplementary information (ESI) available. See DOI
ISSN:2040-3364
2040-3372
DOI:10.1039/c5nr04821d