Wafer-scale and environmentally-friendly deposition methodology for extremely uniform, high-performance transistor arrays with an ultra-low amount of polymer semiconductorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c4tc02674h
We report on a new class of microliter-scale solution processes for fabricating highly uniform and large-area transistor arrays with extremely low consumption of semiconducting polymers. These processes are accomplished by applying a vertical phase separation of polymers with an environmentally beni...
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Main Authors | , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
13.03.2015
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Online Access | Get full text |
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Summary: | We report on a new class of microliter-scale solution processes for fabricating highly uniform and large-area transistor arrays with extremely low consumption of semiconducting polymers. These processes are accomplished by applying a vertical phase separation of polymers with an environmentally benign solvent, a random copolymerization strategy between two highly conductive repeating units, and a meniscus-dragging deposition technique. The successful realization of these three processes, as confirmed by the structural and morphological in-depth characterizations, has enabled the fabrication of high-performance polymeric field-effect transistors that were uniformly distributed, without a single failure, on a 4 inch wafer using only 40 μg of semiconducting polymers. The resulting transistor arrays showed an average mobility of 0.28 cm
2
V
−1
s
−1
, with a low standard deviation of 0.04, as well as ultra-uniform near-zero threshold voltages. Our simple strategy shows great promise for fabricating large-scale organic electronic devices in the future using a truly low-cost process.
We report a novel approach for fabricating ultra-uniform, large areal polymer transistors with extremely low consumption of polymer semiconductors. |
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Bibliography: | 10.1039/c4tc02674h Electronic supplementary information (ESI) available. See DOI |
ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/c4tc02674h |