Parametric study on the controllable growth of ZnO nanostructures with tunable dimensions using catalyst-free metal organic chemical vapor depositionElectronic supplementary information (ESI) available. See DOI: 10.1039/c3ce41733f

In this work we demonstrated the feasibility of controlling the morphology and crystallinity features of ZnO nanostructures by adjusting the growth temperature and reaction pressure in the appropriate windows. The microstructure of the films was made to change from a three-dimensional nanorods form...

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Main Authors Shi, Zhi-Feng, Zhang, Yuan-Tao, Cai, Xu-Pu, Wang, Hui, Wu, Bin, Zhang, Jin-Xiang, Cui, Xi-Jun, Dong, Xin, Liang, Hong-Wei, Zhang, Bao-Lin, Du, Guo-Tong
Format Journal Article
LanguageEnglish
Published 09.12.2013
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Summary:In this work we demonstrated the feasibility of controlling the morphology and crystallinity features of ZnO nanostructures by adjusting the growth temperature and reaction pressure in the appropriate windows. The microstructure of the films was made to change from a three-dimensional nanorods form to a two-dimensional nanowall networks form, and then to a two-dimensional dense film form. The controllable morphology evolution of the ZnO nanostructures was studied by analyzing the growth mechanisms and growth kinetics within different temperature and pressure windows. We also investigated the differences on the crystallinity and optical characteristics of three typical ZnO nanostructures. By optimizing the growth conditions, single-crystal ZnO films with a low full width at half-maximum (221 arcsecond) of the (0002) ω -rocking curve was obtained. It is believed that the promising results will provide valuable information for the fabrication of dimension controllable ZnO nanostructures that can be employed in reliable ZnO-based nanodevices. Demonstrating the feasibility of controlling the morphology and crystallinity features of ZnO nanostructures by adjusting the growth temperature and reaction pressure.
Bibliography:10.1039/c3ce41733f
Electronic supplementary information (ESI) available. See DOI
ISSN:1466-8033
DOI:10.1039/c3ce41733f