Synthesis of mesoporous antimony-doped tin oxide (ATO) thin films and investigation of their electrical conductivityElectronic supplementary information (ESI) available: Structural and electrical properties of synthesized ATO thin films (Table S1), low-magnified SEM images (Fig. S1), SEM images of ATO thin films calcined at 800 C (Fig. S2), EDS elemental mapping (Fig. S3), and enlarged image of Fig. 2b (Fig. S4). See DOI: 10.1039/c3ce40189h

• Main Authors: Suzuki, Norihiro, Kamachi, Yuichiro, Chiang, Ya-Dong, Wu, Kevin C.-W, Ishihara, Shinsuke, Sato, Keisuke, Fukata, Naoki, Matsuura, Mikiya, Maekawa, Kazuhiko, Tanabe, Hirofumi, Ariga, Katsuhiko, Yamauchi, Yusuke
• Format: Journal Article
• Language: English
• Published: 15.05.2013
• ISSN: 1466-8033
• DOI: 10.1039/c3ce40189h

Mesoporous antimony-doped tin oxide (ATO) thin films with crystallized frameworks are synthesized by using a laboratory-made thermally-stable triblock copolymer (named as sulfonated HmSEBmS) as the template at optimized conditions. The porous structure is strongly affected by the amount of copolymer, which causes variation in the electrical conductivity of the synthesized ATO films. Mesoporous antimony-doped tin oxide thin films with crystallized frameworks are synthesized by using a laboratory-made thermally-stable triblock copolymer.