Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropyElectronic supplementary information (ESI) available. See DOI: 10.1039/c2jm30893b

We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordere...

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Main Authors Yu, Liyang, Li, Xiaoran, Smith, Jeremy, Tierney, Steven, Sweeney, Richard, Kjellander, B. K. Charlotte, Gelinck, Gerwin H, Anthopoulos, Thomas D, Stingelin, Natalie
Format Journal Article
LanguageEnglish
Published 24.04.2012
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Summary:We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm 2 V −1 s −1 depending on crystal orientation by careful selection of casting conditions. We demonstrate highly reproducible transistor performance of average mobility in excess of 1 cm 2 V −1 s −1 with β-tetraethyl(triisopropylsilylethynyl) pentacene (BTE-TIPS-PEN) through crystal growth via controlled solvent evaporation by careful selection of solvents and casting temperatures.
Bibliography:10.1039/c2jm30893b
Electronic supplementary information (ESI) available. See DOI
ISSN:0959-9428
1364-5501
DOI:10.1039/c2jm30893b