Enhanced photoelectric performance of Cu2xSe nanostructure by doping with In3+Electronic supplementary information (ESI) available: SEM images of pure Cu2xSe nanocapsule, EDS of sample B. See DOI: 10.1039/c1jm14507j

• Main Authors: Kou, Huanhuan, Jiang, Yimin, Li, Jiajia, Yu, Shengjiao, Wang, Chunming
• Format: Journal Article
• Language: English
• Published: 10.01.2012
• ISSN: 0959-9428; 1364-5501
• DOI: 10.1039/c1jm14507j

In 3+ doped Cu 2 x Se nanostructures have been successfully synthesized on a flexible carboxyl functionalized multi-walled carbon nanotubes/polyimide (COOH-MWCNTs/PI) membrane substrate by an electrochemical codeposition method. In this work, the focus was on the effect of different In 3+ doping concentrations upon the morphological, structural, optical and photoelectrical properties of Cu 2 x Se. Two different kinds of nanostructures, nanoflowers and nanolayers, were obtained. The crystallinity of Cu 2 x Se was improved by doping with In 3+ . The atomic ratio of Cu, Se in Cu 2 x Se nanolayers is about 1.85:1.00, and the atomic % of In is 1.32, confirming the presence of indium. The optical absorption intensity increased with an increase in the doping content of indium ions. However, In 3+ had no effect upon the band gap and absorption edge. The effect of In 3+ dopant on the photoelectric properties was investigated by photocurrenttime and currentvoltage ( I V ) measurements, which demonstrated that the photoelectric properties of Cu 2 x Se were improved by doping with In 3+ . This result is significant for the fabrication of optoelectronic nanomaterials and photodetectors based on In 3+ -doped Cu 2 x Se nanoflowers and nanolayers. A possible mechanism is displayed, which indicates that In 3+ plays an important role in the formation of the Cu 2 x Se morphology.