Reversible photo-induced trap formation in mixed-halide hybrid perovskites for photovoltaics† †Electronic supplementary information (ESI) available: Experimental details, PL, PDS spectra and XRD patterns. See DOI: 10.1039/c4sc03141e Click here for additional data file
A reversible photo-induced instability has been found in mixed-halide photovoltaic perovskites that limits the open circuit voltage in solar cells. We report on reversible, light-induced transformations in (CH 3 NH 3 )Pb(Br x I 1– x ) 3 . Photoluminescence (PL) spectra of these perovskites develop a...
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Published in | Chemical science (Cambridge) Vol. 6; no. 1; pp. 613 - 617 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Royal Society of Chemistry
04.11.2014
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Subjects | |
Online Access | Get full text |
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Summary: | A reversible photo-induced instability has been found in mixed-halide photovoltaic perovskites that limits the open circuit voltage in solar cells.
We report on reversible, light-induced transformations in (CH
3
NH
3
)Pb(Br
x
I
1–
x
)
3
. Photoluminescence (PL) spectra of these perovskites develop a new, red-shifted peak at 1.68 eV that grows in intensity under constant, 1-sun illumination in less than a minute. This is accompanied by an increase in sub-bandgap absorption at ∼1.7 eV, indicating the formation of luminescent trap states. Light soaking causes a splitting of X-ray diffraction (XRD) peaks, suggesting segregation into two crystalline phases. Surprisingly, these photo-induced changes are fully reversible; the XRD patterns and the PL and absorption spectra revert to their initial states after the materials are left for a few minutes in the dark. We speculate that photoexcitation may cause halide segregation into iodide-rich minority and bromide-enriched majority domains, the former acting as a recombination center trap. This instability may limit achievable voltages from some mixed-halide perovskite solar cells and could have implications for the photostability of halide perovskites used in optoelectronics. |
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ISSN: | 2041-6520 2041-6539 |
DOI: | 10.1039/c4sc03141e |