Photoionisation detection of a single Er 3+ ion with sub-100-ns time resolution

Efficient detection of single optical centres in solids is essential for quantum information processing, sensing and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionisation induced by a single Er ion in Si. The high ba...

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Bibliographic Details
Published inNational science review Vol. 11; no. 4; p. nwad134
Main Authors Zhang, Yangbo, Fan, Wenda, Yang, Jiliang, Guan, Hao, Zhang, Qi, Qin, Xi, Duan, Changkui, de Boo, Gabriele G, Johnson, Brett C, McCallum, Jeffrey C, Sellars, Matthew J, Rogge, Sven, Yin, Chunming, Du, Jiangfeng
Format Journal Article
LanguageEnglish
Published China 01.04.2024
Subjects
single optical centres
erbium ions
RF reflectometry
photoionisation detection
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Summary:Efficient detection of single optical centres in solids is essential for quantum information processing, sensing and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionisation induced by a single Er ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionisation detection. With this technique, the optically excited state lifetime of a single Er ion in a Si nano-transistor is measured for the first time to be [Formula: see text]s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centres in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.
ISSN:2053-714X