Energy transfer driven brightening of MoS 2 by ultrafast polariton relaxation in microcavity MoS 2 /hBN/WS 2 heterostructures

Energy transfer is a ubiquitous phenomenon that delivers energy from a blue-shifted emitter to a red-shifted absorber, facilitating wide photonic applications. Two-dimensional (2D) semiconductors provide unique opportunities for exploring novel energy transfer mechanisms in the atomic-scale limit. H...

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Published inNature communications Vol. 15; no. 1; p. 1747
Main Authors Hu, Zehua, Krisnanda, Tanjung, Fieramosca, Antonio, Zhao, Jiaxin, Sun, Qianlu, Chen, Yuzhong, Liu, Haiyun, Luo, Yuan, Su, Rui, Wang, Junyong, Watanabe, Kenji, Taniguchi, Takashi, Eda, Goki, Wang, Xiao Renshaw, Ghosh, Sanjib, Dini, Kevin, Sanvitto, Daniele, Liew, Timothy C H, Xiong, Qihua
Format Journal Article
LanguageEnglish
Published England 26.02.2024
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Summary:Energy transfer is a ubiquitous phenomenon that delivers energy from a blue-shifted emitter to a red-shifted absorber, facilitating wide photonic applications. Two-dimensional (2D) semiconductors provide unique opportunities for exploring novel energy transfer mechanisms in the atomic-scale limit. Herein, we have designed a planar optical microcavity-confined MoS /hBN/WS heterojunction, which realizes the strong coupling among donor exciton, acceptor exciton, and cavity photon mode. This configuration demonstrates an unconventional energy transfer via polariton relaxation, brightening MoS with a record-high enhancement factor of ~440, i.e., two-order-of-magnitude higher than the data reported to date. The polariton relaxation features a short characteristic time of ~1.3 ps, resulting from the significantly enhanced intra- and inter-branch exciton-exciton scattering. The polariton relaxation dynamics is associated with Rabi energies in a phase diagram by combining experimental and theoretical results. This study opens a new direction of microcavity 2D semiconductor heterojunctions for high-brightness polaritonic light sources and ultrafast polariton carrier dynamics.
ISSN:2041-1723