Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO 2 Films

In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO /TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achiev...

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Bibliographic Details
Published inMaterials Vol. 15; no. 6
Main Authors Jang, Chan-Hee, Kim, Hyun-Seop, Kim, Hyungtak, Cha, Ho-Young
Format Journal Article
LanguageEnglish
Published Switzerland 12.03.2022
Subjects
ferroelectric
undoped HfO2
atomic layer deposition
temperature
metal-ferroelectric-metal
frequency
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Summary:In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO /TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achieved after postdeposition annealing at 650 °C, which exhibited a remanent polarization of 8 μC/cm and a coercive electric field of 1.6 MV/cm at 25 °C (room temperature). The ferroelectric property was maintained at 200 °C and decreased as the temperature increased. The ferroelectric property was completely lost above 320 °C and fully recovered after cooling. The frequency dependency was evaluated by bias-dependent capacitance-voltage and s-parameter measurements, which indicated that the ferroelectric property was maintained up to several hundred MHz. This study reveals the ultimate limitations of the application of an undoped HfO MFM capacitor.
ISSN:1996-1944
1996-1944