Structural Characterization of Al 0.37 In 0.63 N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Compact Al In N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement...

Full description

Saved in:
Bibliographic Details
Published inMaterials Vol. 14; no. 9
Main Authors Núñez-Cascajero, Arántzazu, Naranjo, Fernando B, de la Mata, María, Molina, Sergio I
Format Journal Article
LanguageEnglish
Published Switzerland 27.04.2021
Subjects
III-nitrides
AlInN
RF sputtering
TEM
AlN buffer
Online AccessGet full text

Cover

More Information
Summary:Compact Al In N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.
ISSN:1996-1944
1996-1944