Room-temperature synthesis of earth-abundant semiconductor ZnSiN 2 on amorphous carbon

This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesi...

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Bibliographic Details
Published inScientific reports Vol. 11; no. 1; p. 3248
Main Authors Coelho-Júnior, Horácio, Silva, Bruno G, Labre, Cilene, Loreto, Renan P, Sommer, Rubem L
Format Journal Article
LanguageEnglish
Published England 05.02.2021
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Summary:This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.
ISSN:2045-2322