Electronic Characteristics of MoSe 2 and MoTe 2 for Nanoelectronic Applications

Single-crystalline MoSe and MoTe platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe shows p-type, whe...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 13
Main Authors Rani, Asha, Guo, Shiqi, Krylyuk, Sergiy, DiCamillo, Kyle, Debnath, Ratan, Davydov, Albert V, Zaghloul, Mona E
Format Journal Article
LanguageEnglish
Published United States 2018
Subjects
X-ray Diffraction
Chemical Vapor Transport
Raman
Phase Transition
MoSe2
MoTe2
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Summary:Single-crystalline MoSe and MoTe platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe shows p-type, whereas MoSe with channel thickness range of 1.6 nm to 10.5 nm, shows n-type conductivity behavior. At room temperature, both MoSe and MoTe FETs have high ON/OFF current ratio and low contact resistance. Controlling charge carrier type and mobility in MoSe and MoTe layers can pave a way for utilizing these materials for heterojunction nanoelctronic devices with superior performance.
ISSN:0018-9383