Electronic Characteristics of MoSe 2 and MoTe 2 for Nanoelectronic Applications
Single-crystalline MoSe and MoTe platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe shows p-type, whe...
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Published in | IEEE transactions on electron devices Vol. 13 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
2018
|
Subjects | |
Online Access | Get full text |
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Summary: | Single-crystalline MoSe
and MoTe
platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe
shows p-type, whereas MoSe
with channel thickness range of 1.6 nm to 10.5 nm, shows n-type conductivity behavior. At room temperature, both MoSe
and MoTe
FETs have high ON/OFF current ratio and low contact resistance. Controlling charge carrier type and mobility in MoSe
and MoTe
layers can pave a way for utilizing these materials for heterojunction nanoelctronic devices with superior performance. |
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ISSN: | 0018-9383 |