Preparation of Cu 3 N/MoS 2 Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance

Cu N/MoS heterojunction was prepared through magnetron sputtering, and its optical band gap was investigated. Results showed that the prepared Cu N/MoS heterojunction had a clear surface heterojunction structure, uniform surface grains, and no evident cracks. The optical band gap (1.98 eV) of Cu N/M...

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Bibliographic Details
Published inMaterials Vol. 13; no. 8
Main Authors Zhu, Liwen, Cao, Xiu, Gong, Chenyang, Jiang, Aihua, Cheng, Yong, Xiao, Jianrong
Format Journal Article
LanguageEnglish
Published Switzerland 16.04.2020
Subjects
Cu3N/MoS2 films
heterojunction
magnetron sputtering
photocatalysis
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Summary:Cu N/MoS heterojunction was prepared through magnetron sputtering, and its optical band gap was investigated. Results showed that the prepared Cu N/MoS heterojunction had a clear surface heterojunction structure, uniform surface grains, and no evident cracks. The optical band gap (1.98 eV) of Cu N/MoS heterojunction was obtained by analyzing the ultraviolet-visible transmission spectrum. The valence and conduction band offsets of Cu N/MoS heterojunction were 1.42 and 0.82 eV, respectively. The Cu N film and multilayer MoS formed a type-II heterojunction. After the two materials adhered to form the heterojunction, the interface electrons flowed from MoS to Cu N because the latter had higher Fermi level than the former. This behavior caused the formation of additional electrons in the Cu N and MoS layers and the change in optical band gap, which was conducive to the charge separation of electrons in MoS or MoS holes. The prepared Cu N/MoS heterojunction has potential application in various high-performance photoelectric devices, such as photocatalysts and photodetectors.
ISSN:1996-1944
1996-1944