Investigation of Band Alignment for Hybrid 2D-MoS 2 /3D-β-Ga 2 O 3 Heterojunctions with Nitridation

Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS on...

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Bibliographic Details
Published inNanoscale research letters Vol. 14; no. 1; p. 360
Main Authors Huan, Ya-Wei, Xu, Ke, Liu, Wen-Jun, Zhang, Hao, Golosov, Dmitriy Anatolyevich, Xia, Chang-Tai, Yu, Hong-Yu, Wu, Xiao-Han, Sun, Qing-Qing, Ding, Shi-Jin
Format Journal Article
LanguageEnglish
Published United States 02.12.2019
Subjects
Band alignment
β-Ga2O3
Nitridation treatment
Few-layer MoS2
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Summary:Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS on β-Ga O ([Formula: see text]01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS /3D-β-Ga O heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.
ISSN:1931-7573