International Business Machines (IBM) issued new U.S. patent [9,596,086]
NEWS BITES - COMPUTING & INFORMATION TECHNOLOGY Corporate Wire Date: 14 March 2017 20:16 EDT International Business Machines (IBM) has been issued a new U.S. patent titled "Password-based authentication" by the US Patent and Trademark Office. ABSTRACT A password authentication system i...
Saved in:
Published in | News Bites - Computing & Information |
---|---|
Format | Newsletter |
Language | English |
Published |
Melbourne
News Bites Pty Ltd
15.03.2017
|
Subjects | |
Online Access | Get full text |
Cover
Summary: | NEWS BITES - COMPUTING & INFORMATION TECHNOLOGY Corporate Wire Date: 14 March 2017 20:16 EDT International Business Machines (IBM) has been issued a new U.S. patent titled "Password-based authentication" by the US Patent and Trademark Office. ABSTRACT A password authentication system includes an access control server configured to control access by a user computer to a resource dependent on authentication of user passwords associated with user IDs. In response to receipt of a user ID and an input password, the access control server communicates with the plurality of authentication servers to implement password authentication, requiring use of the secret values, in which a second ciphertext is produced by encrypting the input password using said predetermined algorithm. Source: a href='http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=1&f=G&l=50&d=PTXT&p=1&S1=9,596,086&OS=9,596,086&RS=9,596,086' target='_blank' United States Patent and Trademark Office DETAILS OF SAME PATENT ISSUED BY EPO Issue Date Patent Title Patent Number Feb 22, 2017 Password-based authentication GB2541586 (A) SECTION 1 INTERNATIONAL BUSINESS MACHINES ACTIVITIES International Business Machines Corporation (IBM) is an information technology (IT) company. [...]the original coding of the write file is subject to change based on the tracked state data. First and second contact trenches are formed within the dielectric layer exposing at least a portion of the source region and a portion of the drain region, respectively. First and second metal layers are formed within the first and second contact trenches. |
---|