Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUB

Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were perform...

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Bibliographic Details
Published inNASA Center for AeroSpace Information (CASI). Reports
Main Authors Campola, M, Freeman, B, Yau, K
Format Report
LanguageEnglish
Published Hampton NASA/Langley Research Center 02.03.2017
Subjects
Acceptance tests
Dosage
Semiconductor devices
Silicon
Switching
Transistors
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Summary:Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.