TaO(x)N(y): A promising alternative to Ta(2)O(5)

Although tantalum pentoxide is a promising material for the high dielectric constants that will be required in next-generation memories, there is room for improvement. A process for producing TaOxNy high-k dielectric materials has been developed that demonstrates characteristics that are superior to...

Full description

Saved in:
Bibliographic Details
Published inSemiconductor International Vol. 24; no. 8; p. 267
Main Authors Lee, Youngho, Park, Munsu, Song, Juho
Format Trade Publication Article
LanguageEnglish
Published Newton Reed Business Information, a division of Reed Elsevier, Inc 01.07.2001
Subjects
Manufacturing
Memory
Semiconductors
United States > US
Online AccessGet full text

Cover

More Information
Summary:Although tantalum pentoxide is a promising material for the high dielectric constants that will be required in next-generation memories, there is room for improvement. A process for producing TaOxNy high-k dielectric materials has been developed that demonstrates characteristics that are superior to those of traditional tantalum pentoxide.
ISSN:0163-3767