Varistor behavior of the system SnO sub(2)CoOTa sub(2)O sub(5)Cr sub(2)O sub(3)

In this work the system (98.95-x)% SnO2+1%CoO+0.05%Ta2O5+x%Cr2O3 (mol %) was studied, with x=0.05 and 0.10, prepared by the conventional method of oxides mixture, and sintered at 1300 and 1350 degree C for 2 h. The non-linear J versus E electrical characteristics ( alpha =25) were obtained in the Ta...

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Published inJournal of materials science. Materials in electronics Vol. 13; no. 5; pp. 253 - 256
Main Authors Menegotto, G F, Pianaro, SA, Zara, A J, Antunes, SRM, Antunes, A C
Format Journal Article
LanguageEnglish
Published 01.05.2002
Subjects
Ceramics
Chromium oxides
Electronics
Grain boundaries
Materials science
Tantalum oxides
Tin dioxide
Tin oxides
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Summary:In this work the system (98.95-x)% SnO2+1%CoO+0.05%Ta2O5+x%Cr2O3 (mol %) was studied, with x=0.05 and 0.10, prepared by the conventional method of oxides mixture, and sintered at 1300 and 1350 degree C for 2 h. The non-linear J versus E electrical characteristics ( alpha =25) were obtained in the Ta sub(2)O sub(5) and Cr sub(2)O sub(3)-CoO doped highly densified SnO sub(2) ceramics. X-ray diffraction analysis showed that these ceramics are apparently single phase. Electrical properties and microstructure are highly dependent on the Cr sub(2)O sub(3) concentration and on the sintering temperature. Excess of Cr sub(2)O sub(3) leads to porous ceramics destroying the electrical characteristics of the material. Dopant solid solution formation in the SnO sub(2) may be responsible for the formation of electrical barriers in the grain boundaries.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
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ISSN:0957-4522
1573-482X
DOI:10.1023/A:1015530816187