Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba sub(0.6)Sr sub(0.4)TiO sub(3) gate insulator

• Published in: Journal of electroceramics Vol. 23; no. 1; pp. 76 - 79
• Main Authors: Kim, Young-Bae, Kim, Jeong-Ung, Choi, Duck-Kyun, Hong, Jae-Min, Kim, Il-Doo
• Format: Journal Article
• Language: English
• Published: 01.08.2009
• Subjects: Barium strontium titanates; Gates; Insulators; Leakage current; Nickel; Semiconductor devices; Thin films; Transistors; Zinc oxide

We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba sub(0.6)Sr sub(0.4)TiO sub(3) as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 610 super(-9) A/cm, a...