Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba sub(0.6)Sr sub(0.4)TiO sub(3) gate insulator

We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba sub(0.6)Sr sub(0.4)TiO sub(3) as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 610 super(-9) A/cm, a...

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Published inJournal of electroceramics Vol. 23; no. 1; pp. 76 - 79
Main Authors Kim, Young-Bae, Kim, Jeong-Ung, Choi, Duck-Kyun, Hong, Jae-Min, Kim, Il-Doo
Format Journal Article
LanguageEnglish
Published 01.08.2009
Subjects
Barium strontium titanates
Gates
Insulators
Leakage current
Nickel
Semiconductor devices
Thin films
Transistors
Zinc oxide
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Summary:We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba sub(0.6)Sr sub(0.4)TiO sub(3) as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 610 super(-9) A/cm, as compared to a current density of 510 super(-4) A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm super(2) V/s, 1.210 super(6), and 0.21 V/dec respectively.
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ISSN:1385-3449
1573-8663
DOI:10.1007/s10832-008-9538-7