Band offsets and electron transport calculation for strained Si sub(1-x-y)Ge sub(x)C sub(y)/Si heterostructures

• Published in: Journal of materials science. Materials in electronics Vol. 12; no. 4-6; pp. 245 - 248
• Main Authors: Dollfus, P, Galdin, S, Hesto, P, Osten, HJ
• Format: Journal Article
• Language: English
• Published: 01.06.2001
• Subjects: Alloys; Computer simulation; Conduction band; Mathematical analysis; Monte Carlo methods; Offsets; Silicon substrates; Strain
• DOI: 10.1023/A:1011211420560
• ISSN: 0957-4522

The conduction band offset for strained Si sub(1-x-y)Ge sub(x)C sub(y) layers grown on Si(0 0 1) is estimated by considering separately the hydrostatic strain, the uniaxial strain, and the intrinsic chemical effect of Ge and C. Tensile-strained C-containing layers provide a conduction band offset Delta E sub(C) suitable for electron confinement. At given Delta E sub(C) introducing Ge in C-containing alloys allows us to reduce the strain, which should be beneficial to the thermal stability. With a view to n-channel field effect transistor (FET) application on Si substrate, the in-plane electron mobility in tensile ternary layers is calculated using a Monte Carlo transport simulation. The impact of alloy scattering is emphasized.