Band offsets and electron transport calculation for strained Si sub(1-x-y)Ge sub(x)C sub(y)/Si heterostructures

The conduction band offset for strained Si sub(1-x-y)Ge sub(x)C sub(y) layers grown on Si(0 0 1) is estimated by considering separately the hydrostatic strain, the uniaxial strain, and the intrinsic chemical effect of Ge and C. Tensile-strained C-containing layers provide a conduction band offset De...

Full description

Saved in:
Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 12; no. 4-6; pp. 245 - 248
Main Authors Dollfus, P, Galdin, S, Hesto, P, Osten, HJ
Format Journal Article
LanguageEnglish
Published 01.06.2001
Subjects
Alloys
Computer simulation
Conduction band
Mathematical analysis
Monte Carlo methods
Offsets
Silicon substrates
Strain
Online AccessGet full text

Cover

More Information
Summary:The conduction band offset for strained Si sub(1-x-y)Ge sub(x)C sub(y) layers grown on Si(0 0 1) is estimated by considering separately the hydrostatic strain, the uniaxial strain, and the intrinsic chemical effect of Ge and C. Tensile-strained C-containing layers provide a conduction band offset Delta E sub(C) suitable for electron confinement. At given Delta E sub(C) introducing Ge in C-containing alloys allows us to reduce the strain, which should be beneficial to the thermal stability. With a view to n-channel field effect transistor (FET) application on Si substrate, the in-plane electron mobility in tensile ternary layers is calculated using a Monte Carlo transport simulation. The impact of alloy scattering is emphasized.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0957-4522
1573-482X
DOI:10.1023/A:1011211420560