Structural, electrical and optical properties of ITO films with a thin TiO sub(2 seed layer prepared by RF magnetron sputtering)

• Published in: Vacuum Vol. 83; no. 8; pp. 1091 - 1094
• Main Authors: Song, Shumei, Yang, Tianlin, Li, Yanhui, Pang, ZhiYong, Lin, Liang, Lv, Maoshui, Han, Shenghao
• Format: Journal Article
• Language: English
• Published: 01.05.2009
• Subjects: Deposition; Electrical resistivity; Glass; Indium tin oxide; Optical properties; Seeds; Thin films; Titanium dioxide
• ISSN: 0042-207X
• DOI: 10.1016/j.vacuum.2009.01.003

Tin-doped indium oxide (ITO) films were deposited by RF magnetron sputtering on TiO sub(2-coated glass substrates (the TiO) sub(2) layer is usually called seed layer). The properties of ITO films prepared at a substrate temperature of 300 degree C on bare and TiO sub(2-coated glass substrates have been analyzed by using X-ray diffraction, atomic force microscope, optical and electrical measurements. Comparing with single layer ITO film, the ITO film with a TiO) sub(2) seed layer of 2 nm has a remarkable 41.2% decrease in resistivity and similar optical transmittance. The glass/TiO sub(2 (2 nm)/ITO film achieved shows a resistivity of 3.37 x 10) super(-)4 [Omega] cm and an average transmittance of 93.1% in the visible range. The glass/TiO sub(2 may be a better substrate compared with bare glass for depositing high quality ITO films.)