Comparison frequency doubling and charge pump matching techniques for dual-band Delta capital sigma fractional-N frequency synthesizer
The frequency synthesizer with two LC-VCOs is fully integrated in a 0.35- mu m CMOS technology. In supporting dual bands, all building blocks except VCOs are shared. A current compensation scheme using a replica charge pump improves the linearity of the frequency synthesizer and, thus, suppresses sp...
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Published in | IEEE journal of solid-state circuits Vol. 40; no. 11 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.01.2005
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Subjects | |
Online Access | Get full text |
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Summary: | The frequency synthesizer with two LC-VCOs is fully integrated in a 0.35- mu m CMOS technology. In supporting dual bands, all building blocks except VCOs are shared. A current compensation scheme using a replica charge pump improves the linearity of the frequency synthesizer and, thus, suppresses spurious tones. To reduce the quantization noise from a Delta capital sigma modulator and the noise from the building blocks except the VCO, the proposed architecture uses a frequency doubler with a noise-insensitive duty-cycle correction circuit (DCC) in the reference clock path. Power consumption is 37.8 mW with a 2.7-V supply. The proposed frequency synthesizer supports 10-kHz channel spacing with the measured phase noise of -114 dBc/Hz and -141 dBc/Hz at 100-kHz and 1.25-MHz offsets, respectively, in the PCS band. The fractional spurious tone at 10-kHz offset is under -54 dBc. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
ISSN: | 0018-9200 |
DOI: | 10.1109/JSSC.2005.857368 |