InAs-InAlGaAs quantum dot DFB lasers based on InP 001

The InAs-InAlGaAs quantum dot (QD) lasers with the InAlGaAs-InAlAs material system were fabricated on distributed feedback (DFB) grating structures on InP (001). The single-mode operation of InAs-InAlGaAs QD DFB lasers in continuous-wave mode was successfully achieved at the emission wavelength of 1...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 18; no. 4
Main Authors Soo Kim, Jin, Hong Lee, Jin, Ui Hong, Sung, Kwack, Ho-Sang, Seok Choi, Byung, Kon Oh, Dae
Format Journal Article
LanguageEnglish
Published 01.01.2006
Subjects
Density
Emission
Holes
Indium phosphides
Lasers
Noise levels
Quantum dots
Wavelengths
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Summary:The InAs-InAlGaAs quantum dot (QD) lasers with the InAlGaAs-InAlAs material system were fabricated on distributed feedback (DFB) grating structures on InP (001). The single-mode operation of InAs-InAlGaAs QD DFB lasers in continuous-wave mode was successfully achieved at the emission wavelength of 1.564 mum at room temperature. This is the first observation on the InP-based QD lasers operating around the emission wavelength window of 1.55 mum. The threshold current density of the InAs-InAlGaAs QD DFB laser with a cavity length of 1 mm and a ridge width of 3 mum, in which one of the cleaved facets was coated with 95% high-reflection, was 1.23 kA/cm super(2) (176 A/cm super(2 ) for single QD layer). The sidemode suppression ratio value of the QD DFB laser was as high as 42 dB at the driving current of 100 mA
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ISSN:1041-1135
DOI:10.1109/LPT.2006.870187