High-temperature RF probe station for device characterization through 500 degree C and 50 GHz

A high-temperature measurement system capable of performing on-wafer microwave testing of semiconductor devices has been developed. This high-temperature probe station can characterize active and passive devices and circuits at temperatures ranging from room temperature to above 500 degree C. The he...

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Bibliographic Details
Published inIEEE transactions on instrumentation and measurement Vol. 54; no. 1
Main Authors Schwartz, Z D, Downey, AN, Alterovitz, SA, Ponchak, GE
Format Journal Article
LanguageEnglish
Published 01.01.2005
Subjects
Active control
Devices
Frequency ranges
Heaters
Instrumentation
Networks
Silicon carbide
Stations
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Summary:A high-temperature measurement system capable of performing on-wafer microwave testing of semiconductor devices has been developed. This high-temperature probe station can characterize active and passive devices and circuits at temperatures ranging from room temperature to above 500 degree C. The heating system uses a ceramic heater mounted on an insulating block of NASA Shuttle tile. The temperature is adjusted by a graphical computer interface and is controlled by the software-based feedback loop. The system is used with a vector network analyzer to measure scattering parameters over a frequency range from 1 to 50 GHz. The microwave probes, cables, and inspection microscope are all shielded to protect from heat damage. The high-temperature probe station has been successfully used to characterize gold transmission lines on silicon carbide at temperatures up to 540 degree C.
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ISSN:0018-9456
DOI:10.1109/TIM.2004.838137