Applying f sub(max), f sub(t), and f sub(mag) for Microwave Transistor Designs at Microwave and Millimeter-Wave Frequencies Application Notes

Traditional descriptions of transistor power gains versus frequency lead to the conclusion that Mason's unilateral gain is unity at f sub(max) and G sub(ma) extrapolated to unity gives f sub(mag), where f sub(max) > f sub(mag)> (Vendelin et al., 1990). A similar figure of merit is derived...

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Bibliographic Details
Published inIEEE microwave magazine Vol. 8; no. 1
Main Authors George D. Vendelin, George DVendelin, Shih-Chieh Shin, Shih-Chieh Shin
Format Magazine Article
LanguageEnglish
Published 01.01.2007
Subjects
Descriptions
Extrapolation
Gain
Microwaves
Power gain
Semiconductor devices
Transistors
Unity
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Summary:Traditional descriptions of transistor power gains versus frequency lead to the conclusion that Mason's unilateral gain is unity at f sub(max) and G sub(ma) extrapolated to unity gives f sub(mag), where f sub(max) > f sub(mag)> (Vendelin et al., 1990). A similar figure of merit is derived from current gain (
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1527-3342
DOI:10.1109/MMW.2007.316274