On the Role of the NaN super(+) Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior

This paper focuses on the role of the N-N junction doping profile model of a PiN diode on its turn-off transient and, particularly, the influence of multiple epitaxies in the N-N profile. A conventional doping profile model has been used in a previous work and an identification procedure for the mai...

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Bibliographic Details
Published inIEEE transactions on power electronics Vol. 23; no. 1
Main Authors Allard, B, Garrab, H, ben Salah, T, Morel, H, Ammous, K, Besbes, K
Format Journal Article
LanguageEnglish
Published 01.01.2008
Subjects
Computer simulation
Design parameters
Devices
Doping
Electronics
PIN diodes
Readers
Voltage
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Summary:This paper focuses on the role of the N-N junction doping profile model of a PiN diode on its turn-off transient and, particularly, the influence of multiple epitaxies in the N-N profile. A conventional doping profile model has been used in a previous work and an identification procedure for the main design parameters has been demonstrated. However the validity range of identified PiN-diode models appeared quite limited for hard current and voltage conditions. Readers have asked for the effect of a more advanced doping profile. The turn-off transient of an STTB506D device is considered from experimental and simulation point-of-view inside a fully characterized switching cell. A limitation of the conventional doping profile model is demonstrated and explained physically in order to introduce the necessity of a more complex doping profile. An advanced doping profile is then considered and a comparative study between experimental and simulated turn-off transient behavior of the device is established.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0885-8993
DOI:10.1109/TPEL.2007.911882