Electrical Characteristics and Thermal Stability of hbox Hf x hbox Ta y hbox Si z hbox N Metal Gate Electrode for Advanced MOS Devices

To continuously improve device performance with the shrinkage of device dimension, some novel devices like fully depleted silicon-on-insulator and symmetric double-gate transistor have been proposed. Various Hf sub(x)Ta sub(y)Si sub(z)N metal gate electrodes were developed in this paper to achieve w...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 55; no. 11
Main Authors Yang, Chang-Ta Yang, Chang-Liao, Kuei-Shu, Chang, Hsin-Chun, Fu, Chung-Hao, Wang, Tien-Ko, Tsai, Wen-Fa, Ai, Chi-Fong, Wu, Wen-Fa
Format Journal Article
LanguageEnglish
Published 01.01.2008
Subjects
Density
Devices
Electrodes
Gates
Hysteresis
Leakage current
Thermal stability
Work functions
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Summary:To continuously improve device performance with the shrinkage of device dimension, some novel devices like fully depleted silicon-on-insulator and symmetric double-gate transistor have been proposed. Various Hf sub(x)Ta sub(y)Si sub(z)N metal gate electrodes were developed in this paper to achieve work function near the midgap and excellent thermal stability. Furthermore, this paper also demonstrated a good metal gate candidate, Hf sub(0.19)Ta sub(0.41)Si sub(0.26)N sub(0.14), possessing excellent electrical performances in hysteresis effect, interface trap density, stress-induced leakage current, and excellent thermal stability as well.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ObjectType-Feature-1
ISSN:0018-9383
DOI:10.1109/TED.2008.2005128