A 0.1a5 GHz Cryogenic SiGe MMIC LNA

In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically designed for operation at cryogenic temperatures is presented. At room temperature, the circuit provides greater than 25.8 dB of gain with an average noise temperature (T sub(e)) of 76 K (NF = 1 dB) and...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 19; no. 6
Main Authors Bardin, J C, Weinreb, S
Format Journal Article
LanguageEnglish
Published 01.01.2009
Subjects
Amplification
Gain
Integrated circuits
Microwaves
Noise levels
Noise temperature
Silicon germanides
Wideband
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Summary:In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically designed for operation at cryogenic temperatures is presented. At room temperature, the circuit provides greater than 25.8 dB of gain with an average noise temperature (T sub(e)) of 76 K (NF = 1 dB) and S sub(11) of -9 dB for frequencies in the 0.1-5 GHz band. At 15 K, the amplifier has greater than 29.6 dB of gain with an average T sub(e) of 4.3 K and S sub(11) of -14.6 dB for frequencies in the 0.1-5 GHz range. To the authors' knowledge, this is the lowest noise ever reported for a silicon integrated circuit operating in the low microwave range and the first matched wideband cryogenic integrated circuit LNA that covers frequencies as low as 0.1 GHz.
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ISSN:1531-1309
DOI:10.1109/LMWC.2009.2020041