hbox HfO 2 aIII-Nitride RF Switch With Capacitively Coupled Contacts

We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO sub(2) layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than...

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Bibliographic Details
Published inIEEE electron device letters Vol. 30; no. 5
Main Authors Koudymov, A, Pala, N, Tokranov, V, Oktyabrsky, S, Gaevski, M, Jain, R, Yang, J, Hu, X, Shur, M, Gaska, R, Simin, G
Format Journal Article
LanguageEnglish
Published 01.01.2009
Subjects
Aluminum gallium nitrides
Dielectrics
Gallium nitrides
Hafnium oxide
Handles
Leakage current
Radio frequencies
Switches
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Summary:We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO sub(2) layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ObjectType-Feature-1
ISSN:0741-3106
DOI:10.1109/LED.2009.2017284