Electron-Related Phenomena at the TaN / Al 2 O 3 Interface

• Published in: IEEE transactions on electron devices Vol. 57; no. 3; pp. 637 - 643
• Main Authors: Rao, Rosario, Lorenzi, Paolo, Ghidini, Gabriella, Palma, Fabrizio, Irrera, Fernanda
• Format: Journal Article
• Language: English
• Published: 01.03.2010
• Subjects: Aluminum; Capacitance; Devices; Instability; Metal oxide semiconductors; Pictures; Stacks; Trapping

The goal of this work is to study the transient electrical features of metal/high- k interface in MOS stacks. To this aim, electrons are injected from the gate of TaN / Al 2 O 3 / SiO 2 / p - Si capacitors in pulsed regime. The displacement current flowing during the pulse front is detected, and the...