Electron-Related Phenomena at the TaN / Al 2 O 3 Interface

The goal of this work is to study the transient electrical features of metal/high- k interface in MOS stacks. To this aim, electrons are injected from the gate of TaN / Al 2 O 3 / SiO 2 / p - Si capacitors in pulsed regime. The displacement current flowing during the pulse front is detected, and the...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 57; no. 3; pp. 637 - 643
Main Authors Rao, Rosario, Lorenzi, Paolo, Ghidini, Gabriella, Palma, Fabrizio, Irrera, Fernanda
Format Journal Article
LanguageEnglish
Published 01.03.2010
Subjects
Aluminum
Capacitance
Devices
Instability
Metal oxide semiconductors
Pictures
Stacks
Trapping
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Summary:The goal of this work is to study the transient electrical features of metal/high- k interface in MOS stacks. To this aim, electrons are injected from the gate of TaN / Al 2 O 3 / SiO 2 / p - Si capacitors in pulsed regime. The displacement current flowing during the pulse front is detected, and the capacitance is extracted. As a result, for the first time, a flat-band instability related to electron trapping in states near the metal/high- k interface is measured on a millisecond timescale. A picture of the time evolution of the charge density inside the oxide bulk is drawn, with the aid of a finite-element simulator. Reliability of the metal/high- k interface is also investigated by performing stress experiments in pulsed conditions. It is shown that after a certain number of pulses, the creation of new traps at the top interface of the MOS stack becomes relevant.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2039100