Epitaxial LaFeAsO1-xFx thin films grown by pulsed laser deposition FREE ARTICLE

Superconducting and epitaxially grown LaFeAsO1-xFx thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with the epitaxial relation and a full width at half-maximum value of 1 d...

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Bibliographic Details
Published inSuperconductor science & technology Vol. 23; no. 2; p. 022002
Main Authors Kidszun, M, Haindl, S, Reich, E, Hanisch, J, Iida, K, Schultz, L, Holzapfel, B
Format Journal Article
LanguageEnglish
Published 01.02.2010
Subjects
Epitaxial growth
Magnetic fields
Mathematical analysis
Orientation
Pulsed laser deposition
Superconductivity
Thin films
Transition temperature
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Summary:Superconducting and epitaxially grown LaFeAsO1-xFx thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with the epitaxial relation and a full width at half-maximum value of 1 degree . Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc,90% of 25 K with a high residual resistive ratio of 6.8. The preparation technique applied, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post-annealing process, is suitable for fabrication of high quality LaFeAsO1-xFx thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0953-2048
DOI:10.1088/0953-2048/23/2/022002