Fundamental properties of CdFe sub(2)O sub(4) semiconductor thin film

The fundamental properties of CdFe sub(2)O sub(4) semiconductor thin film have been investigated. CdFe sub(2)O sub(4) polycrystalline powder was synthesized by a co-precipitation-calcination process, and its thin film was prepared on a glass substrate by the pulsed laser deposition (PLD) method. The...

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Published inSolid state communications Vol. 150; no. 41-42; pp. 2036 - 2039
Main Authors Miao, Fengxiu, Deng, Zanhong, Lv, Xianshun, Gu, Guixin, Wan, Songming, Fang, Xiaodong, Zhang, Qingli, Yin, Shaotang
Format Journal Article
LanguageEnglish
Published 01.11.2010
Subjects
Band spectra
Electrical resistivity
Reflectivity
Resistivity
Semiconductors
Spectra
Thin films
Transmittance
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Summary:The fundamental properties of CdFe sub(2)O sub(4) semiconductor thin film have been investigated. CdFe sub(2)O sub(4) polycrystalline powder was synthesized by a co-precipitation-calcination process, and its thin film was prepared on a glass substrate by the pulsed laser deposition (PLD) method. The transmittance and reflectance spectra of the thin film indicate that the compound is an indirect bandgap material with E sub()g1.97 eV. Its absorption coefficients are larger than 10 super(4) cm super(-1) when the wavelength is shorter than 700 nm. The electrical conductivity of the CdFe sub(2)O sub(4) thin film was measured at different temperatures, its conductivity activation energy is about 71.9 meV. The relationship between CdFe sub(2)O sub(4) semiconductor properties and its microstructure was discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0038-1098
DOI:10.1016/j.ssc.2010.08.010