Reaction joining of SiC ceramics using TiB sub(2)-based composites

• Published in: Journal of the European Ceramic Society Vol. 30; no. 15; pp. 3203 - 3208
• Main Authors: Tian, Wubian, Kita, Hideki, Hyuga, Hideki, Kondo, Naoki, Nagaoka, Takaaki
• Format: Journal Article
• Language: English
• Published: 01.11.2010
• Subjects: Bonding; Ceramics; Joining; Joining materials; Joints; Silicon carbide; Titanium; Titanium diboride
• ISSN: 0955-2219
• DOI: 10.1016/j.jeurceramsoc.2010.07.017

SiC ceramics were reaction joined in the temperature range of 1450-1800 C using TiB sub(2)-based composites starting from four types of joining materials, namely Ti-BN, Ti-B sub(4)C, Ti-BN-Al and Ti-B sub(4)C-Si. XRD analysis and microstructure examination were carried out on SiC joints. It is found that the former two joining materials do not yield good bond for SiC ceramics at temperatures up to 1600 C. However, Ti-BN-Al system results in the connection of SiC substrates at 1450 C by the formation of TiB sub(2)-AlN composite. Furthermore, nearly dense SiC joints with crack-free interface have been produced from Ti-BN-Al and Ti-B sub(4)C-Si systems at 1800 C, i.e. joints TBNA80 and TBCS80, whose average bending strengths are measured to be 65 MPa and 142 MPa, respectively. The joining mechanisms involved are also discussed.