SiC nano-particles application to nano-floating gate memory

Nonvolatile memory device with the multi-layered SiC nano-particles embedded in SiO(2) dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nano-particles were formed by using radio-frequency magnetron sputtering in the argon ambient and post th...

Full description

Saved in:
Bibliographic Details
Published in29th International Conference on the Physics of Semiconductors Vol. 1199; pp. 509 - 510
Main Authors Lee, Dong Uk, Lee, Tae Hee, Kim, Eun Kyu, Shin, Jin-Wook, Cho, Won-Ju
Format Journal Article
LanguageEnglish
Published 27.07.2008
Online AccessGet full text

Cover

More Information
Summary:Nonvolatile memory device with the multi-layered SiC nano-particles embedded in SiO(2) dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nano-particles were formed by using radio-frequency magnetron sputtering in the argon ambient and post thermal annealing process of SiC film. High-resolution transmission electron microscope analysis showed the multi-layer of SiC nano-particles between tunnel oxide and control oxide layers. The average size and density of the SiC nano-particles were approximately 5 nm and 2 x 10(12) cm(-2), respectively. The memory window of nonvolatile memory devices with the multi-layer of SiC nano-particles to define programming and erasing state were about 2.7 V during the operations at c10 V for 700 ms, and then it was maintained around at 1.1 V after 10(5) sec.
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Feature-2
ObjectType-Article-3
ISBN:0735407363
9780735407367
ISSN:0094-243X