Improving photoluminescence of highly strained 1.32 mum GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

The (1 0 0) GaAs substrates with misorientations of 0 deg, 2 deg, 6 deg, and 15 deg toward [0 1 1] were used in this study to improve the crystal quality and optical properties of GaAsSb/GaAs quantum wells (QWs) grown by metalorganic vapor phase epitaxy (MOVPE). The 15 deg off sample possesses the l...

Full description

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 310; no. 23; pp. 4854 - 4857
Main Authors Wan, Cheng-Tien, Su, Yan-Kuin, Chuang, Ricky W, Huang, Chun-Yuan, Wang, Yi-Sin, Chen, Wei-Cheng, Yu, Hsin-Chieh
Format Journal Article
LanguageEnglish
Published 15.11.2008
Online AccessGet full text

Cover

More Information
Summary:The (1 0 0) GaAs substrates with misorientations of 0 deg, 2 deg, 6 deg, and 15 deg toward [0 1 1] were used in this study to improve the crystal quality and optical properties of GaAsSb/GaAs quantum wells (QWs) grown by metalorganic vapor phase epitaxy (MOVPE). The 15 deg off sample possesses the lowest Sb content of the GaAsSb epi-layer, which thereby means the epitaxy has smaller Sb distribution coefficient. The comparison of photoluminescence (PL) spectra also exhibit that the 15 deg off sample is with stronger PL intensity and without peak shifting and spectral width broadening. These phenomena show that the crystal quality has been greatly improved by growing GaAsSb/GaAs QW structures on misorientation substrates.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2008.07.113