Reliability Considerations in 3D Stacked Strata Systems

• Published in: AIP conference proceedings Vol. 1143; pp. 213 - 223
• Main Authors: Pozder, Scott, Jain, Ankur, Jones, Robert, Huang, Zhihong, Justison, Patrick, Chatterjee, Ritwik
• Format: Journal Article
• Language: English
• Published: 07.11.2008
• ISSN: 0094-243X

The bonding of multiple silicon strata to form stacked circuits with high bandwidth connections, increased circuit densities, decreased latency and the capability to stack disparate technologies is increasingly gaining interest in the microelectronics industry. Stacking has been demonstrated using both dielectric-to-dielectric and metal-to-metal bonds for die and wafer stratum bonding. The considerable thermal, mechanical and electromigration reliability challenges resulting from such bonding has been the focus of some recently reported work. In this paper, the bond reliability of various bonding types, including wafer-to-wafer dielectric bond, die-to-wafer Cu/Sn-to-Cu bond and a simultaneous organic adhesive with Cu/Sn-to-Cu bond is discussed. Thermomechanical and electromigration characterization of the die-to-wafer 3D structures is also discussed. Results indicate that the intrinsic reliability of these structures can be as robust as current 2D technologies.