A K-band low-noise amplifier in 0.18-mm CMOS technology for SUB-1-V operation

A K-band low-noise amplifier (LNA) was realized in a standard 0.18-m CMOS technology. The cascaded common-source configuration of four stages was adopted for low voltage operation and high gain performance. In addition, the gate-source transformer feedback technique was employed to achieve a low noi...

Full description

Saved in:
Bibliographic Details
Published inMicrowave and optical technology letters Vol. 51; no. 9; pp. 2202 - 2204
Main Authors Jin, Jun-De, Hsu, Shawn S H
Format Journal Article
LanguageEnglish
Published 01.01.2009
Online AccessGet full text

Cover

More Information
Summary:A K-band low-noise amplifier (LNA) was realized in a standard 0.18-m CMOS technology. The cascaded common-source configuration of four stages was adopted for low voltage operation and high gain performance. In addition, the gate-source transformer feedback technique was employed to achieve a low noise figure (NF), which also enabled a single power supply operation and without using any resistive components. Under a supply voltage of only 0.8 V and a DC power consumption PDC of 12.6 mW, the measured gain and NF are 14.5 and 5.3 dB at 21 GHz, respectively.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0895-2477
DOI:10.1002/mop.24530