Structural properties, electric response and electronic feature of BaSnO(3) perovskite

• Published in: Physica. B, Condensed matter Vol. 404; no. 18; pp. 2720 - 2722
• Main Authors: Farfan, J Cuervo, Rodriguez, J Arbey, Fajardo, F, Lopez, E Vera, Tellez, D.A. Landinez, Roa-Rojas, J
• Format: Journal Article
• Language: English
• Published: 01.10.2009
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.06.126

It has been observed that the semiconducting compound SnO(2) presents very good results as gas sensor. One important development has been performed to study perovskite oxides for this relevant application. One oxide material which constitutes an excellent candidate for this technological application is BaSnO(3). Polycrystalline samples with single phase of BaSnO(3) were synthesized by using the solid state reaction method. Samples were characterized structurally by means of X-ray diffraction (XRD) technique. Rietveld refinement, by using the GSAS code, reveals that this material synthesizes in a cubic perovskite, space group Pm3m (#221), with lattice parameter [MathML equation]. Electric response was examined through the impedance spectroscopy technique. Results of Bode diagram, from an equivalent circuit, evidence the semiconductor character of material. We carried out a theoretical study by means of the calculation of the bands diagram and the density of states of the BaSnO(3). Calculation was performed by employing the density functional theory (DFT), with the generalized gradient approach (GGA). DFT theory permitted to establish that BaSnO(3) material has an indirect semiconducting behavior. The calculated gap for this perovskite-like stagnate is at least 0.4 eV. Bulk modulus for material was also determined to be 132 GPa.