14-GHz GaNAsSb Unitraveling-Carrier 1.3-muhbox{m} Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

• Published in: IEEE electron device letters Vol. 30; no. 6; pp. 590 - 592
• Main Authors: Tan, K H, Yoon, S F, Fedderwitz, S, Stohr, A, Loke, W K, Wicaksono, S, Ng, T K, Weiss, M, Poloczek, A, Rymanov, V, Patra, A S, Tangdiongga, E, Jager, D
• Format: Journal Article
• Language: English
• Published: 01.06.2009
• ISSN: 0741-3106
• DOI: 10.1109/LED.2009.2018290

We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3- muhbox{m} GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radio-frequency plasma- assisted nitrogen source. The 0.1-muhbox{m} -thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and-9 V are 6 and 34hbox{mA}/hbox{cm}{2}, respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at-9 V.