Reliability of charge trapping memories with high-@@ik@ control dielectrics (Invited Paper)
In this paper, we evaluate the potentiality of high-@@ik@ materials (Al@@d2@O@@d3@, HfO@@d2@ and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-@@ik@ based capacitors allowed to discuss the retention performances at room and high temperatures of hi...
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| Published in | Microelectronic engineering Vol. 86; no. 7-9; pp. 1796 - 1803 |
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| Main Authors | , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.09.2009
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| Online Access | Get full text |
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| Abstract | In this paper, we evaluate the potentiality of high-@@ik@ materials (Al@@d2@O@@d3@, HfO@@d2@ and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-@@ik@ based capacitors allowed to discuss the retention performances at room and high temperatures of high-@@ik@ interpoly dielectrics. High-@@ik@ materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO@@d2@/Si@@d3@N@@d4@/SiO@@d2@/Si) memories. The role of the high-@@ik@ layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention. |
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| AbstractList | In this paper, we evaluate the potentiality of high-@@ik@ materials (Al@@d2@O@@d3@, HfO@@d2@ and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-@@ik@ based capacitors allowed to discuss the retention performances at room and high temperatures of high-@@ik@ interpoly dielectrics. High-@@ik@ materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO@@d2@/Si@@d3@N@@d4@/SiO@@d2@/Si) memories. The role of the high-@@ik@ layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention. |
| Author | Brianceau, P Ghibaudo, G Lombardo, S Bocquet, M Masarotto, L Martin, F Bongiorno, C Vianello, E Perniola, L Pananakakis, G Molas, G Gely, M Colonna, J P De Salvo, B Grampeix, H |
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| Title | Reliability of charge trapping memories with high-@@ik@ control dielectrics (Invited Paper) |
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