Reliability of charge trapping memories with high-@@ik@ control dielectrics (Invited Paper)

• Published in: Microelectronic engineering Vol. 86; no. 7-9; pp. 1796 - 1803
• Main Authors: Molas, G, Bocquet, M, Vianello, E, Perniola, L, Grampeix, H, Colonna, J P, Masarotto, L, Martin, F, Brianceau, P, Gely, M, Bongiorno, C, Lombardo, S, Pananakakis, G, Ghibaudo, G, De Salvo, B
• Format: Journal Article
• Language: English
• Published: 01.09.2009
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2009.03.083

In this paper, we evaluate the potentiality of high-@@ik@ materials (Al@@d2@O@@d3@, HfO@@d2@ and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-@@ik@ based capacitors allowed to discuss the retention performances at room and high temperatures of high-@@ik@ interpoly dielectrics. High-@@ik@ materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO@@d2@/Si@@d3@N@@d4@/SiO@@d2@/Si) memories. The role of the high-@@ik@ layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention.