Novel wide band gap alloyed semiconductors, @ix(LiGaO@d2)@@d1/2@-(1-@ix)ZnO, and fabrication of their thin films

• Published in: Science in China. Series E, Technological sciences Vol. 52; no. 1; pp. 111 - 115
• Main Authors: Omata, T, Tanaka, K, Tazuke, A, Nose, K, Otsuka-Yao-Matsuo, S
• Format: Journal Article
• Language: English
• Published: 01.01.2009
• ISSN: 1006-9321
• DOI: 10.1007/s11431-008-0335-y

Oxide semiconductor alloys of @ix(LiGaO@d2)@@d1/2@-(1-@ix)ZnO were fabricated by the solid state reaction between b-LiGaO@d2 and ZnO and rf-magnetron sputtering. For the solid state reaction, the wurtzite-type single phases were obtained in the composition range of @ix,0.38. The formation range of the alloys was wider than that of the (Mg@@d1-x@Zn@dx)O system, because the b-LiGaO@d2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The electrical resistivity and energy band gap of the 0.38(LiGaO@d2)@@d1/2@-0.62ZnO alloyed ceramic were 0.45 Ocm and 3.7 eV, respectively, at room temperature. For the alloying by sputtering, the films consisting of the wurtzite-type single phase were obtained over the entire composition range of @ix(LiGaO@d2)@@d1/2@-(1-@ix)ZnO. The energy band gap was controllable in the range from 3.3 to 5.6 eV. For the as-deposited film fabricated using the 0.4(LiGaO@d2)@@d1/2@- 0.6ZnO alloyed ceramic target, the energy band gap was 3.74 eV, and the electrical resistivity, carrier density and the Hall mobility at room temperature were 3.6 Wcm, 3.4x10@@u17@ cm@@u-3@ and 5.6 cm@u2 V@@u-1@ s@@u-1@, respectively.