High-Program/Erase-Speed SONOS With @@iIn Situ@ Silicon Nanocrystals

In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times...

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Bibliographic Details
Published inIEEE electron device letters Vol. 29; no. 10; pp. 1148 - 1151
Main Authors Chiang, Tsung-Yu, Chao, Tien-Sheng, Wu, Yi-Hong, Yang, Wen-Luh
Format Journal Article
LanguageEnglish
Published 01.10.2008
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Summary:In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows ( > 5.5 V), lower operation voltage, high P/E speed, and longer retention time ( > 10@@u8@ s for 13% charge loss).
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0741-3106
DOI:10.1109/LED.2008.2002944