Crystal growth of InN by MOCVD with electric field along the @@ic@-axis

We report on physical properties of InN grown by metalorganic chemical vapor deposition (MOCVD) with electric field applied along the @@ic@-axis. The electric field is applied continuously from the growth of the low temperature InN buffer layer to the procedure of cooling down to room temperature. A...

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Bibliographic Details
Published inJournal of crystal growth Vol. 311; no. 10; pp. 2806 - 2808
Main Authors Ota, Yuichi, Biswas, Ramkrishna, Higo, Masaaki, Inushima, Takashi
Format Journal Article
LanguageEnglish
Published 01.05.2009
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Summary:We report on physical properties of InN grown by metalorganic chemical vapor deposition (MOCVD) with electric field applied along the @@ic@-axis. The electric field is applied continuously from the growth of the low temperature InN buffer layer to the procedure of cooling down to room temperature. As a result, the crystal morphology degrades, @@ic@-lattice constant elongates by 0.12% at +/-1 kV/cm, Hall mobility decreases, and the phonon vibration along the @@ic@-axis broadens, which suggests that the physical properties of InN can be controlled by the electric field applied along the @@ic@-axis during the crystal growth.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ObjectType-Feature-1
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2009.01.012