SHORT COMMUNICATION: Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SicxNy:H(n) alloys

• Published in: Progress in photovoltaics Vol. 16; no. 2; pp. 123 - 127
• Main Authors: Ferre, R, Orpella, A, Munoz, D, Martin, I, Recart, F, Voz, C, Puigdollers, J, Cabarrocas, P Roca i, Alcubilla, R
• Format: Journal Article
• Language: English
• Published: 01.03.2008

Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombinatio...